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INTEGRATED CIRCUITS
DATA SHEET
TEA1610P; TEA1610T Zero-voltage-switching resonant converter controller
Product specification File under Integrated Circuits, IC11 2001 Apr 25
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
FEATURES * Integrated high voltage level-shift function * Integrated high voltage bootstrap diode * Transconductance error amplifier for ultra high-ohmic regulation feedback * Latched shut-down circuit for overcurrent and overvoltage protection * Low start-up current (green function) * Adjustable minimum and maximum frequencies * Adjustable dead time * Undervoltage lockout. GENERAL DESCRIPTION The TEA1610 is a monolithic integrated circuit implemented in a high-voltage DMOS process. The circuit is a high voltage controller for a zero-voltage switching resonant converter. The IC provides the drive function for two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift circuit, an oscillator with accurately-programmable frequency range, a latched shut-down function and a transconductance error amplifier. To guarantee an accurate 50% switching duty factor, the oscillator signal passes through a divide-by-two flip-flop before being fed to the output drivers. The circuit is very flexible and enables a broad range of applications for different mains voltages. QUICK REFERENCE DATA SYMBOL VHS IGH(source); IGL(source) IGH(sink); IGL(sink) fbridge(max) VI(CM) PARAMETER bridge voltage supply (high side) gate driver source current gate driver sink current maximum bridge frequency error amplifier common mode input voltage
TEA1610
TEA1610P; TEA1610T
handbook, halfpage
VHS bridge voltage supply (high side) MOSFET SWITCH
VDD
HALFBRIDGE CIRCUIT
RESONANT CONVERTER
MGU336
signal ground power ground
Fig.1 Basic configuration.
APPLICATIONS * TV and monitor power supplies * High voltage power supplies.
CONDITIONS
MAX. 600 -225 300 V mA mA
UNIT
Cf = 100 pF (see Fig.10)
550 2.5
kHz V
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TEA1610P TEA1610T DIP16 SO16 DESCRIPTION plastic dual in-line package; 16 leads (300 mil); long body plastic small outline package; 16 leads; body width 3.9 mm; low stand-off height 2 VERSION SOT38-1 SOT109-2
2001 Apr 25
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
BLOCK DIAGRAM
TEA1610P; TEA1610T
handbook, full pagewidth
VDD 11 8 BOOTSTRAP SUPPLY LEVEL SHIFTER HIGH SIDE DRIVER 7 6 GH SH VDD(F)
TEA1610
reset LOW SIDE DRIVER start/stop oscillation shut-down 9 start-up LOGIC
10 4 15
GL PGND
SD
SGND
2.33 V
/2
2 1 gm ERROR AMPLIFIER 2.5 V 5 n.c. 3 VCO 3V 14 IRS 16 0.6 V 12 x2 Icharge OSCILLATOR Idischarge 13
MGU337
I+ I-
VREF IFS
CF
Fig.2 Block diagram.
2001 Apr 25
3
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
PINNING SYMBOL PIN I- I+ VCO PGND n.c. SH GH VDD(F) SGND GL VDD IFS CF IRS SD VREF 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 DESCRIPTION error amplifier inverting input error amplifier non-inverting input error amplifier output power ground not connected (high voltage spacer) high side switch source gate of the high side switch floating supply voltage for the high side driver signal ground gate of the low side switch supply voltage oscillator discharge current input oscillator capacitor oscillator charge current input shut-down input reference voltage
handbook, halfpage
TEA1610P; TEA1610T
I- 1 I+ 2 VCO 3 PGND 4
16 VREF 15 SD 14 IRS 13 CF
TEA1610P
n.c. 5 SH 6 GH 7 VDD(F) 8
MGU338
12 IFS 11 VDD 10 GL 9 SGND
Fig.3 Pin configuration: TEA1610P.
handbook, halfpage
I- 1 I+ 2 VCO 3 PGND 4
16 VREF 15 SD 14 IRS 13 CF
TEA1610T
n.c. 5 SH 6 GH 7 VDD(F) 8
MGU347
12 IFS 11 VDD 10 GL 9 SGND
Fig.4 Pin configuration: TEA1610T.
2001 Apr 25
4
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
FUNCTIONAL DESCRIPTION Start-up When the applied voltage at VDD reaches VDD(initial) (see Fig.5), the low side power switch is turned-on while the high side power switch remains in the non-conducting state. This start-up output state guarantees the initial charging of the bootstrap capacitor (Cboot) used for the floating supply of the high side driver.
TEA1610P; TEA1610T
During start-up, the voltage on the frequency capacitor (Cf) is zero and defines the start-up state. The output voltage of the error amplifier is kept constant (typ. 2.5 V) and switching starts at about 80% of the maximum frequency at the moment pin VDD reaches the start level. The start-up state is maintained until VDD reaches the start level (13.5 V), the oscillator is activated and the converter starts operating.
handbook, full pagewidth
VDD 0
VDD(start) VDD(initial)
GH-SH 0
GL 0 t
MGT998
Fig.5 Start-up.
2001 Apr 25
5
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
Oscillator The internal oscillator is a current-controlled oscillator that generates a sawtooth output. The frequency of the sawtooth is determined by the external capacitor Cf and the currents flowing into the IFS and IRS pins.
TEA1610P; TEA1610T
The minimum frequency and the dead time are set by the capacitor Cf and resistors Rf(min) and Rdt. The maximum frequency is set by resistor Rf (see Fig.10). The oscillator frequency is exactly twice the bridge frequency to achieve an accurate 50% duty factor. An overview of the oscillator and driver signals is given in Fig.6.
handbook, full pagewidth
CF
GH-SH 0
GL 0 dead time (high to low) dead time (low to high) t
MGT999
Fig.6 Oscillator and driver signals.
2001 Apr 25
6
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
Dead time resistor Rdt (see Fig.10) The dead time resistor Rdt is connected between the 3 V reference pin (VREF) and the IFS current input pin. The voltage on the IFS pin is kept constant at a temperature independant value of 0.6 V. The current that flows into the IFS pin is determined by the value of resistor Rdt and the 2.4 V voltage drop across this resistor. The IFS input current equals the discharge current of capacitor Cf and determines the falling slope of the oscillator. The falling slope time is used to create a dead time (tdt) between two successive switching actions of the half-bridge switches: 2.4 V I IFS = ------------R dt C f x V Cf t dt = -----------------------I IFS t IFS = t dt Minimum frequency resistor (see Fig.10) The Rf(min) resistor is connected between the VREF pin (3 V reference voltage) and the IRS current input (held at a temperature independant voltage level of 0.6 V). The charge current of the capacitor Cf is twice the current flowing into the IRS pin. The Rf(min) resistor has a voltage drop of 2.4 V and its resistance defines the minimum charge current (rising slope) of the Cf capacitor if the control current is zero. The minimum frequency is defined by this minimum charge current (IIRS1) and the discharge current: 2.4 V I IRS1 = ---------------R f ( min ) C f x V Cf t IRS1 = -----------------------2 x I IRS1 1 f min = ----------------------t dt + t IRS1 Maximum frequency resistor The output voltage is regulated by changing the frequency of the half-bridge converter. The maximum frequency is determined by the Rf resistor which is connected between the error amplifier output VCO and the oscillator current input pin IRS. The current that flows through the Rf resistor (IIRS2) is added to the current flowing through the
handbook, halfpage f
TEA1610P; TEA1610T
Rf(min) resistor. As a result, the charge current ICF increases and the oscillation frequency increases. As the falling slope of the oscillator is constant, the relationship between the output frequency and the charge current is not a linear function (see Figs 7 and 9): V VCO - 0.6 I IRS2 = ---------------------------Rf C f x V Cf t IRS2 = ------------------------------- x 2 I IRS1 + I IRS2 The maximum output voltage of the error amplifier and the value of Rf determine the maximum frequency: V VCO ( max ) - 0.6 I IRS2 ( max ) = ----------------------------------------R f C f x V Cf t IRS ( min ) = ------------------------------------------ x 2 I IRS1 + I IRS2(max) 1 f max = ---------T osc T osc = t IRS ( min ) + t IFS Bridge frequency accuracy is optimum in the low frequency region. At higher frequencies both the dead time and the oscillator frequency show a decay. The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCf and the charge and discharge currents. However, at higher frequencies the accuracy decreases due to delays in the circuit.
MGW001
osc
f osc(max) f osc(start)
f osc(min)
0
I IRS
Fig.7 Frequency range.
2001 Apr 25
7
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
Error amplifier The error amplifier is a transconductance amplifier. Thus the output current at pin VCO is determined by the amplifier transconductance and the differential voltage on input pins I+ and I-. The output current IVCO is fed to the IRS input of the current-controlled oscillator. The source capability of the error amplifier increases current in the IRS pin when the differential input voltage is positive. Therefore the minimum current is determined by resistor Rf(min) and the minimum frequency setting is independent of the characteristics of the error amplifier. The error amplifier has a maximum output current of 0.5 mA for an output voltage up to 2.5 V. If the source current decreases, the oscillator frequency also decreases resulting in a higher regulated output voltage. During start-up, the output voltage of the amplifier is held at a constant value of 2.5 V. This voltage level defines, together with resistor Rf, the initial switching frequency of the TEA1610 after start-up. Shut-down
TEA1610P; TEA1610T
The shut-down input (SD) has an accurate threshold level of 2.33 V. When the voltage on input SD reaches 2.33 V, both power switches immediately switch off and the TEA1610 enters shut-down mode. During shut-down mode, pin VDD is clamped by an internal Zener diode at 12.0 V with 1 mA input current. This clamp prevents VDD rising above the rating of 14 V due to low supply current to the TEA1610 in shut-down mode. When the TEA1610 is in the shut-down mode, it can be activated again only by lowering VDD below the VDD reset level (5.3 V typical). The shut-down latch is then reset and a new start-up cycle can commence (see Fig.8).
handbook, full pagewidth
oscillation
shutdown
supply off
start-up
oscillation VDD(start)
VDD
VDD(sdc) VDD(reset)
SD
VSD(th)
GH-SH 0
GL 0 t
MGW002
Fig.8 Shut-down.
2001 Apr 25
8
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
TEA1610P; TEA1610T
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referred to the ground pins which must be interconnected externally; positive currents flow into the IC. SYMBOL Voltages VSH VDD VI+ VI- VSD Currents IIFS IIRS IREF Ptot Tamb Tstg Handling VES electrostatic handling voltage note 1 note 2 Notes 1. Human body model class 2: equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor. 2. Machine model class 2: equivalent to discharging a 200 pF capacitor through a 0.75 H coil and 10 resistor. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-pin) PARAMETER thermal resistance from junction to ambient thermal resistance from junction to pin CONDITIONS in free air VALUE 100 50 UNIT K/W K/W - - 2000 200 V V oscillator falling slope input current oscillator rising slope input current VREF source current total power dissipation ambient temperature storage temperature Tamb < 70 C operating - - - - -25 -25 1 1 -2 0.8 +70 +150 mA mA mA high side driver voltage supply voltage amplifier non-inverting input voltage amplifier inverting input voltage shut-down input voltage 0 0 0 0 0 600 14 5 5 5 V V V V V PARAMETER CONDITIONS MIN. MAX. UNIT
Power and temperature W C C
QUALITY SPECIFICATION In accordance with "SNW-FQ-611-E".
2001 Apr 25
9
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
TEA1610P; TEA1610T
CHARACTERISTICS All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; VDD = 13 V and Tamb = 25 C; tested in the circuit of Fig.10; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - - 12.9 9.0 3.8 low side off; high side off; IDD = 1 mA 11.0 4.5 low side on; high side off Cf = 100 pF; IIFS = 0.5 mA; IIRS = 50 A; Co = 200 pF; note 1 low side off; high side off; VDD = 9 V 130 - TYP. - MAX. UNIT A
High voltage pins VDD(F), GH and SH IL leakage current VDD(F), VGH and VSH = 600 V 30
Supply pin VDD VDD(initial) VDD(start) VDD(stop) VDD(hys) VDD(sdc) VDD(reset) IDD supply voltage for defined driver output start oscillator voltage stop oscillator voltage start-stop hysteresis voltage shut-down clamp voltage reset voltage supply current: start-up operating 180 2.4 220 - A mA low side on; high side off 4 13.4 9.4 4.0 12.0 5.3 5 13.9 9.8 4.2 13.0 6.0 V V V V V V
shut-down Reference voltage pin VREF VREF IREF Zo(VREF) V REF ----------------T reference voltage current capability output impedance temperature coefficient
-
130
180
A
IREF = 0 mA source only IREF = -1 mA IREF = 0; Tj = 25 to 150 C
2.9 -1.0 - -
3.0 - 5.0 -0.3
3.1 - - -
V mA mV/K
Current controlled oscillator pins IRS, IFS, CF ICF(ch)(min) ICF(ch)(max) VIRS ICF(dis)(min) VIFS fbridge(min) minimum CF charge current maximum CF charge current pin IRS voltage minimum CF discharge current pin IFS voltage minimum bridge frequency (for stable operation) IIRS = 15 A; VCF = 2 V IIRS = 200 A; VCF = 2 V IIRS = 200 A IIRS = 50 A; VCF = 2 V IIFS = 1 mA; VCF = 2 V IIFS = 1 mA CF = 100 pF; IIFS = 0.5 mA; IIRS = 50 A; f bridge f osc = -------2 450 500 550 kHz 28 340 570 47 0.93 570 188 30 380 600 50 0.98 600 200 32 420 630 53 1.03 630 212 A A mV A mA mV kHz
ICF(dis)(max) maximum CF discharge current
fbridge(max)
maximum bridge frequency
Cf = 100 pF; IIFS = 1 mA; f osc IIRS = 200 A; f bridge = -------- ; 2 note 2
2001 Apr 25
10
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
SYMBOL VCF(L) VCF(H) VCf(p-p) tdt PARAMETER CF trip level LOW CF trip level HIGH Cf voltage (peak-to-peak value) dead time Cf = 100 pF; IIFS = 0.5 mA; IIRS = 50 A DC level DC level CONDITIONS
TEA1610P; TEA1610T
MIN. - - 1.63 0.37
TYP. 1.27 3.0 1.73 0.40
MAX. - - 1.83 0.43
UNIT V V V s
Output drivers IGH(source) IGH(sink) IGL(source) IGL(sink) VGH(H) VGH(L) VGL(H) VGL(L) Vd(boot) ISD VSD(th) II(CM) VI(CM) VI(offset) gm Ao GB VVCO(max) IVCO(max) VVCO(start) Notes 1. Supply current IDD will increase with increasing bridge frequency to drive the capacitive load of two MOSFETs. Typical MOSFETs for the TEA1610 application are 8N50 (Philips type PHX80N50E, Qg(tot) = 55 nC typ.) and these will increase the supply current at 150 kHz according to the following formula: IDD = 2 x Qg(tot) x fbridge = 2 x 55 nC x 150 kHz = 16.5 mA. 2. The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF and the charge/discharge currents ICF(ch) and ICF(dis). high side output source current high side output sink current low side output source current low side output sink current high side output voltage HIGH high side output voltage LOW low side output voltage HIGH low side output voltage LOW bootstrap diode voltage drop VDD(F) = 13 V; VSH = 0; VGH = 0 VDD(F) = 13 V; VSH = 0; VGH = 13 V VGL = 0 VGL = 14 V VDD(F) = 13 V; VSH = 0; IGH = 10 mA VDD(F) = 13 V; VSH = 0; IGH = 10 mA IGL = 10 mA IGL = 10 mA I = 5 mA -135 - -135 - 10.8 - 10.8 - 1.5 -180 300 -180 300 12 0.2 12 0.2 1.8 -225 - -225 - - 0.5 - 0.5 2.1 mA mA mA mA V V V V V A V A V mV A/mV dB MHz V mA V
Shut-down input pin SD input current threshold level VSD = 2.33 V 0 2.26 - - VI(CM) = 1 V; IVCO = -10 mA VI(CM) = 1 V; source only -2 - 0.2 2.33 -0.1 - 0 330 70 5 3.6 -0.5 2.50 0.5 2.40 -0.5 2.5 +2 - - - 4.0 -0.6 2.70
Error amplifier pins I+, I-, VCO common mode input current common mode input voltage input offset voltage transconductance open loop gain gain bandwidth product maximum output voltage maximum output current output voltage during start-up VI(CM) = 1 V
RL = 10 k to GND; VI(CM) = 1 V - RL = 10 k to GND; VI(CM) = 1 V - operating; RL = 10 k to GND operating; VVCO = 1 V IVCO = 0.3 mA 3.2 -0.4 2.30
2001 Apr 25
11
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
APPLICATION INFORMATION An application example of a zero-voltage-switching resonant converter application using TEA1610 is shown in Fig.10. In the off-mode the VDD voltage is pulled below the stop level of 9.4 V by the 7.5 V Zener diode and the half-bridge is not driven. In the on-mode the TEA1610 starts-up with a high-ohmic bleeder resistor. After passing the level for start of oscillation, the TEA1610 is in normal operating mode and consumes the normal supply current delivered by the 12 V supply. The dead time is set by Rdt and Cf. The minimum frequency is adjusted by Rf(min) and the frequency range is set by Rf. The output voltage is adjusted with a potentiometer connected to the inverting input of the error amplifier and is regulated via a feedback circuit. The shut-down input is used for overvoltage protection. To prevent interference, filter capacitors can be added on pins IFS, IRS and VREF. The maximum value of each filter capacitor is 100 pF.
TEA1610P; TEA1610T
Practical values of the application example are given in Fig.9 in which the measured oscillator frequency with capacitor Cf = 220 pF is shown as a function of the charge current IIRS. Note that the slope of the measured frequency differs from the theoretical frequency (frequency set) calculated as described in Section "Maximum frequency resistor". The measured dead time is directly related to charge current (total current flowing into pin IRS) and therefore to oscillator frequency. The measured frequency graph can be used to determine the required Rf resistor for a certain maximum frequency in an application with the same value of capacitor Cf. More application information can be found in application note "AN99011".
handbook, full pagewidth
800
MGW003
1200 t dt (ns) 900
f osc (kHz) 600
dead time (low to high) dead time (high to low)
400 frequency set frequency measured
600
200
300
0 0 20 40 60 80 100 120 140 160 180 I IRS (A)
0 200
fosc at IIFS = 500 A. fosc = 2 x fbridge.
Fig.9 Oscillator frequency and measured dead time as functions of charge current IIRS.
2001 Apr 25
12
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SUPPLY signal ground LOGIC SGND 9 regulator feedback
Philips Semiconductors
handbook, full pagewidth
Zero-voltage-switching resonant converter controller
bridge voltage supply (high side) 12 V RVDD
output voltage CVDD VDD 11 on/off bootstrap diode LEVEL SHIFTER HIGH SIDE DRIVER 7 GH Lp 6 SH Cboot L r(ext) 8 VDD(F)
7.5 V
TEA1610
LOW SIDE DRIVER
10 GL
Cp
Cr
4 PGND 15 SD power ground overvoltage protection
/2
I+ 2 I- 1 gm
2.33 V
MGU339
SGND OSCILLATOR ERROR AMPLIFIER 3 VCO Rf CSS 3V 0.6 V 14 IRS R f(min) 16 VREF R dt 12 IFS 13 CF Cf
TEA1610P; TEA1610T
Product specification
Fig.10 Application diagram.
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
PACKAGE OUTLINES DIP16: plastic dual in-line package; 16 leads (300 mil); long body
TEA1610P; TEA1610T
SOT38-1
D seating plane
ME
A2
A
L
A1
c Z e b1 b 16 9 MH wM (e 1)
pin 1 index E
1
8
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 4.7 0.19 A1 min. 0.51 0.020 A2 max. 3.7 0.15 b 1.40 1.14 0.055 0.045 b1 0.53 0.38 0.021 0.015 c 0.32 0.23 0.013 0.009 D (1) 21.8 21.4 0.86 0.84 E (1) 6.48 6.20 0.26 0.24 e 2.54 0.10 e1 7.62 0.30 L 3.9 3.4 0.15 0.13 ME 8.25 7.80 0.32 0.31 MH 9.5 8.3 0.37 0.33 w 0.254 0.01 Z (1) max. 2.2 0.087
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT38-1 REFERENCES IEC 050G09 JEDEC MO-001 EIAJ SC-503-16 EUROPEAN PROJECTION
ISSUE DATE 95-01-19 99-12-27
2001 Apr 25
14
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
TEA1610P; TEA1610T
SO16: plastic small outline package; 16 leads; body width 3.9 mm; low stand-off height
SOT109-2
D
E
A X
c y HE vMA
Z 16 9
Q A2 A1 pin 1 index Lp 1 e bp 8 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm A max. 1.65 A1 0.20 0.05 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 10.0 9.8 E (1) 4.0 3.8 0.16 0.15 e 1.27 0.050 HE 6.2 5.8 0.244 0.228 L 1.05 0.041 Lp 1.0 0.4 0.039 0.016 Q 0.7 0.6 0.028 0.024 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z (1) 0.7 0.3 0.028 0.012
inches 0.065
0.008 0.057 0.002 0.049
0.019 0.0100 0.39 0.014 0.0075 0.38
8 0o
o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT109-2 REFERENCES IEC 076E07 JEDEC MS-012 EIAJ EUROPEAN PROJECTION
ISSUE DATE 97-05-22 99-12-27
2001 Apr 25
15
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
SOLDERING Introduction This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mount components are mixed on one printed-circuit board. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. Through-hole mount packages SOLDERING BY DIPPING OR BY SOLDER WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joints for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. MANUAL SOLDERING Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. Surface mount packages REFLOW SOLDERING Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method.
TEA1610P; TEA1610T
Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 220 C for thick/large packages, and below 235 C for small/thin packages. WAVE SOLDERING Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. MANUAL SOLDERING Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C. 16
2001 Apr 25
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
Suitability of IC packages for wave, reflow and dipping soldering methods
TEA1610P; TEA1610T
SOLDERING METHOD MOUNTING PACKAGE WAVE Through-hole mount DBS, DIP, HDIP, SDIP, SIL Surface mount BGA, HBGA, LFBGA, SQFP, TFBGA HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS PLCC(4), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 4. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. suitable(2) not suitable not suitable(3) suitable not recommended(4)(5) not recommended(6) REFLOW(1) DIPPING - suitable suitable suitable suitable suitable suitable - - - - -
2001 Apr 25
17
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development
TEA1610P; TEA1610T
DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Apr 25
18
Philips Semiconductors
Product specification
Zero-voltage-switching resonant converter controller
NOTES
TEA1610P; TEA1610T
2001 Apr 25
19
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2001
Internet: http://www.semiconductors.philips.com
SCA 72
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613502/01/pp20
Date of release: 2001
Apr 25
Document order number:
9397 750 07993

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